| Authors: | J. Schrauwen, E.J. Klein, F. Ay, W.C.L. Hopman, R.M. De Ridder, D. Van Thourhout, R. Baets | | Title: | Reducing optical losses in focused-ion-beam etched silicon by annealing | | Format: | International Conference Poster | | Publication date: | 5/2008 | | Journal/Conference/Book: | EIPBN
| | Location: | United States | | Citations: | Look up on Google Scholar
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Abstract
Focused-ion-beam (FIB) is an interesting alternative for prototyping of photonic components because it can directly etch a semiconductor and reach feature sizes <50 nm. However, silicon exhibits high optical losses after FIB etching. We propose two techniques to reduce these losses: high temperature annealing and iodine enhanced FIB etching. Related Research Topics
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