Authors:	K. Quang Le, Sangin Kim
Title:	Model for Cross-plane Thermal Conductivity of Layered Quantum Semiconductor Structures and Application for Thermal Modeling of GaInAs/AlInAs-based Quantum Cascade Lasers
Format:	International Journal
Publication date:	2/2008
Journal/Conference/Book:	Physica Status Solidi A
Volume(Issue):	205(2) p.392
DOI:	10.1002/pssa.200723346
Citations:	3 (Dimensions.ai - last update: 15/12/2024) Look up on Google Scholar
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Abstract

In this paper, a theoretical model for the cross-plane thermal conductivity of layered quantum semiconductor structures is presented. This model is used to evaluate the cross-plane thermal conductivity of the active region in GaInAs/AlInAs-based quantum cascade (QC) lasers. We take into account the temperature dependent thermal conductivity of the layers. By including their interface thermal resistance and scattering processes via multilayer quantum structure, we predict a decrease by an order of magnitude of the lattice thermal conductivity of the active region in GaInAs/AlInAs-based QC laser. We computed the cross-plane thermal conductivity of InGaAs/AlInAs-based QC laser active region at low temperature from 80 K to 130 K is in the range of 0.5-0.7 W/(mK), whilst the average experimental value obtained by Lops el at. [J. Appl. Phys. 100, 043109] is 0.6 W/(mk). In addition, using the result as input, we present a numerical investigation into the facet temperature profile in this laser during continuous wave operation using finite element method.