Authors:	T.J. Karle, Y. Halioua, F. Raineri, P. Monnier, R. Braive, L. Le gratiet, G. Beaudoin, I. Sagnes, G. Roelkens, F. Van Laere, D. Van Thourhout, R. Raj
Title:	Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides
Format:	International Journal
Publication date:	3/2010
Journal/Conference/Book:	Journal of Applied Physics
Volume(Issue):	107(6) p.8 pages
DOI:	10.1063/1.3319667
Citations:	44 (Dimensions.ai - last update: 29/12/2024) 34 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

The integration of two-dimensional III-V InP-based photonic crystal and silicon wire waveguides is
achieved through an accurate alignment of the two optical levels using mix-and-match deep
ultraviolet
DUV/electron beam lithography. The adhesively bonded structures exhibit an
enhancement of light emission at frequencies where low group velocity modes of the photonic
crystal line defect waveguides occur. Pulsed laser operation is obtained from these modes at room
temperature under optical pumping. The laser light is coupled out of the Si waveguide via grating
couplers directly to single mode fiber