Authors:	R. Kumar, L. Liu, G. Roelkens, E.-J.Geluk, T. de Vries, F. Karouta, P. Regreny, D. Van Thourhout, R. Baets, G. Morthier
Title:	10GHz All-Optical Gate Based on a III-V/SOI Microdisk
Format:	International Journal
Publication date:	7/2010
Journal/Conference/Book:	Photonics Technology Letters
Volume(Issue):	22(13) p.981-983
DOI:	10.1109/lpt.2010.2048895
Citations:	13 (Dimensions.ai - last update: 14/4/2024) 9 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

We demonstrate an ultra-fast and low power all-optical gate in pump-probe configuration based on free carrier induced refractive index modulation in a 5µm radius InP/InGaAsP microdisk heterogeneously integrated onto a silicon-on-insulator waveguide circuit. High speed gating is obtained by extracting the carriers from the microdisk active layer by applying a reverse bias. Measured transient responses show that this gate is capable of working up to 20 GHz.

Related Research Topics

• III-V on silicon microdisk lasers (2008-2014)

Related Projects

• ICT: HISTORIC (Heterogeneous InP on Silicon Technology for Optical Routing and LogIC)