Authors:	M. Lamponi, S. Keyvaninia, F. Pommereau, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, D. Bordelc, S. Messaoudenec, J.-M. Fedelic, G.-H. Duana
Title:	Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through InP die to SOI wafer bonding
Format:	International Conference Proceedings
Publication date:	5/2010
Journal/Conference/Book:	Group IV Photonics
Volume(Issue):	p.WB6
DOI:	10.1109/group4.2010.5643441
Citations:	11 (Dimensions.ai - last update: 21/4/2024) 9 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

Silicon photonics platform is drawing an increasing attention due to the promise of fabricating low-cost, compact circuits that integrate photonic and microelectronic elements [1]. Today, practical Si-based light sources are still missing, despite recent demonstration of optically pumped germanium lasers [2]. This situation has driven research to the heterogeneous integration of III-V on silicon. One of the heterogeneous integration approaches is the use of wafer bonding techniques [3-6]. In such an approach, InP dies are bonded on a SOI wafer, and then processed to fabricate lasers lithographically aligned to silicon waveguides.

Related Research Topics

• Die-to-wafer bonding technology (2003-2012)

Related Projects

• ICT: HELIOS (pHotonics ELectronics functional Integration on CMOS)