Authors:	H. Yu, W. Bogaerts, A. De Keersgieter
Title:	Optimization of ion implantation condition for depletion-type silicon optical modulators
Format:	International Journal
Publication date:	12/2010
Journal/Conference/Book:	IEEE Journal of Quantum Electronics
Volume(Issue):	46(12) p.1763-1768
DOI:	10.1109/jqe.2010.2067206
Citations:	33 (Dimensions.ai - last update: 14/4/2024) 26 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

We study the influence of the ion implantation conditions on the performance of depletion-type silicon optical modulators by a combined simulation of the process flow, the electrical characteristic and the beam propagation. Through calculations about different implantation positions, energies and tilt angles, our work reveals that a gap between specific implantation windows is able to alleviate the modulation efficiency degradation due to the lateral straggling of implanted ions, while a tilt angle reduces the optical loss without harming the modulation efficiency. After an optimization about the implantation condition, the extinction ratio of the Mach-Zehnder modulator can be improved by 4.6 dB, while its optical loss falls from 3 dB to 2.47 dB. Finally, a simplified doping pattern which eliminates 2 implantation steps is discussed.

Related Research Topics

• All-Silicon Modulators