| Authors: | M. Tassaert, S. Keyvaninia, D. Van Thourhout, G. Roelkens | | Title: | Strategies to increase the modal gain in electrically pumped quantum dot based amplifiers integrated on a Silicon-On-Insulator waveguide circuit | | Format: | International Conference Proceedings | | Publication date: | 11/2010 | | Journal/Conference/Book: | Photonics Society Benelux meeting
| | Location: | Delft, Netherlands | | Citations: | Look up on Google Scholar
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Abstract
We propose two waveguide structures that allow for high optical confinement in the active region, low loss and electrical injection using a regular P-I-N injection scheme. To achieve these properties, we use a bonded III-V film on a Silicon-On-Insulator circuit. By deeply etching the III-V film to define the waveguide and shallowly etching trenches in the top p-InP contact layer, we can push the mode towards the active layer and away from the lossy contact layers. These waveguide structures were developed for a quantum dot active region to relieve its low confinement factor and consequently reach a higher modal gain. Related Research Topics
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