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Authors: K. Quang Le, P. Bienstman
Title: Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer with Additional Silicon Layer
Format: International Journal
Publication date: 5/2011
Journal/Conference/Book: IEEE Photonics Journal
Volume(Issue): 3(3) p.538-545
DOI: 10.1109/jphot.2011.2156778
Citations: 18 ( - last update: 3/12/2023)
10 (OpenCitations - last update: 3/5/2023)
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It is theoretically found that by adding a thin dielectric layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon-on-insulator (SOI) a sensitivity enhancement is obtained of up to 2500 nm/RIU (refractive index unit) for short sensors. At the same time, the corresponding figure of merit (FOM) is as high as 237 (RIU-1). This improvement is caused by the reduction in group index difference between the two interfering modes.

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