|S. Stankovic, G. Roelkens, D. Van Thourhout, Jones, Richard, Sysak, Matt, Heck, John
|Evanescently-Coupled Hybrid III-V/Silicon Laser Based on DVS-BCB Bonding
|International Conference Proceedings
|15th Annual Symposium of IEEE Photonics Society Benelux Chapter
|IEEE Photonics Society Benelux Chapter,
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Hybrid III-V/Silicon lasers based on evanescent coupling are one of the most advanced and the most promising devices in the ongoing efforts to build an efficient light source on a silicon platform. Most of the recently reported devices are based on direct die-to-wafer bonding of III-V epitaxial layers to silicon waveguides, which might prove difficult to implement in an industrial-scale fabrication process. As an alternative approach, in this paper, we present an evanescently-coupled, hybrid III-V/silicon laser based on adhesive DVS-BCB bonding. The device layout, the fabrication process and the achieved results are presented and discussed.
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