Authors:	G. Duan, C. Jany, A. Le Liepvre, M. Lamponi, A. Accard, F. Poingt, D. Make, F. Lelarge, S. Messaoudene, D. Bordel, J.M. Fedeli, S. Keyvaninia, G. Roelkens, D. Van Thourhout, D. Thomson, F. Gardes, G. Reed
Title:	Integrated hybrid III-V/Si laser and transmitter
Format:	International Conference Proceedings
Publication date:	8/2012
Journal/Conference/Book:	24th International Conference on Indium Phosphide and Related Materials (invited)
Volume(Issue):	p.paper Mo-1C.3
Location:	Santa Barbara, United States
DOI:	10.1109/iciprm.2012.6403306
Citations:	8 (Dimensions.ai - last update: 15/12/2024) 7 (OpenCitations - last update: 10/5/2024) Look up on Google Scholar
Download:	(440KB)

Abstract

This paper reports on recent advances on
integrated hybrid InP/SOI lasers and transmitters. Based on a molecular wafer bonding technique, we develop hybrid III-V/Si lasers exhibiting new features: narrow III-V waveguide width of less than 3 ìm, tapered III-V and silicon waveguides for mode
transfer. These new features lead to good laser performances: a lasing threshold as low as 30mA and an output power of more than 10 mW at room temperature in continuous wave operation regime from a single facet. Continuous wave lasing up to 70°C is
obtained. Moreover, hybrid III-V/Si lasers, integrating two intracavity ring resonators, are fabricated. Such lasers achieve a thermal tuning range of 45 nm, with a side mode suppression
ratio higher than 40 dB. More recently we demonstrate a tunable transmitter, integrating a hybrid III-V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by
heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.