Authors:	M. Pantouvaki, H. Yu, M. Rakowski, P. Christie, P. Verheyen, G. Lepage, N. Van Hoovels, P. Absil, J. Van Campenhout
Title:	Comparison of Silicon Ring Modulators with Interdigitated and Lateral PN Junctions
Format:	International Journal
Publication date:	4/2013
Journal/Conference/Book:	IEEE Journal of Selected Topics in Quantum Electronics
Volume(Issue):	19(2) p.7900308
DOI:	10.1109/JSTQE.2012.2228169
Citations:	28 (Dimensions.ai - last update: 15/12/2024) 16 (OpenCitations - last update: 10/5/2024) Look up on Google Scholar
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Abstract

We present a rigorous comparison between Si ring modulators based on interdigitated and lateral p-n junctions. A detailed Si ring modulator model is derived, which is used to fit and benchmark the measured modulation performance of both ring modulators. At 10 Gb/s and 1 Vpp drive swing, the interdigitated ring modulator is found to exhibit a superior extinction ratio at low insertion loss as compared to the lateral ring modulator, at the expense of a higher capacitive load. Design improvements are proposed to obtain 25-Gb/s operation with similar extinction ratio and low insertion loss in future devices. Such devices are attractive to enable power-efficient scaling of optical interconnects to 400 Gb/s and beyond.

Related Research Topics

• All-Silicon Modulators