The past years have seen a renewed attention dedicated to engineer nanostructures with a large phonon-photon coupling. The Silicon-On-Insulator (SOI) platform is an exciting platform for high-density optomechanical circuitry. In this work, significant progress on Stimulated Brillouin Scattering on SOI chips is reported. We show Brillouin gain exceeding the optical losses in a series of suspended silicon nanowires, with up to 0.5dB net gain. Moreover, no evidence of gain saturation is seen at power flux of 0.4W/µm2. We obtain a gain coefficient up to 9000/(W.m), the highest efficiency to date in the phononic gigahertz range.
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