| Authors: | A. Abbasi, B. Moeneclaey, J. Verbist, X. Yin, J. Bauwelinck, G. Roelkens, G. Morthier | | Title: | 56 Gb/s Electro-Absorption Modulation of a Heterogeneously Integrated InP-on-Si DFB Laser Diode | | Format: | International Conference Presentation | | Publication date: | 3/2017 | | Journal/Conference/Book: | Optical Fiber Communication Conference (OFC)
| | Editor/Publisher: | OSA, | | Volume(Issue): | p.paper Th4G.2 (3 pages) | | Location: | Los Angeles, United States | | DOI: | 10.1364/ofc.2017.th4g.2 | | Citations: | 2 (Dimensions.ai - last update: 14/4/2024)
2 (OpenCitations - last update: 19/4/2024)
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Abstract
Electro-absorption modulation of a heterogeneously integrated InP/Si DFB laser is demonstrated by reverse biasing the InP tapers, used to couple the light between the InP and the Si waveguides. Modulation at 56 Gb/s is demonstrated. Related Research Topics
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