| Authors: | A. Srinivasan, C. Porret, E. Vissers, P. Geiregat, D. Van Thourhout, R. Loo, M. Pantouvaki, J. Van Campenhout | | Title: | High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers | | Format: | International Conference Proceedings | | Publication date: | 8/2018 | | Journal/Conference/Book: | Conference on Lasers and Electro-Optics Pacific Rim
| | Editor/Publisher: | OSA, | | Volume(Issue): | p.Th3C.1 | | Location: | Hong Kong, China | | DOI: | 10.1364/CLEOPR.2018.Th3C.1 | | Citations: | 2 (Dimensions.ai - last update: 14/4/2024)
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Abstract
Quantum-confined Stark effect with a record absorption contrast of 2.5 for 1V swing is demonstrated in Ge/GeSi quantum well stacks grown on Si using ultra-thin buffer layers, targeting future integration in a silicon photonics platform. Related Research Topics
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