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Authors: A. Srinivasan, C. Porret, M. Pantouvaki, Y. Shimura, P. Geiregat, R. Loo, J. Van Campenhout, D. Van Thourhout
Title: Carrier scattering induced linewidth broadening in in-situ P-doped Ge layers
Format: International Journal
Publication date: 10/2018
Journal/Conference/Book: Applied Physics Letters
Editor/Publisher: AIP publishing, 
Volume(Issue): 113(16) p.paper 161101
DOI: 10.1063/1.5040153
Citations: 8 ( - last update: 21/7/2024)
8 (OpenCitations - last update: 27/6/2024)
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Highly P doped Ge layers are proposed as a material to realize an on-chip laser for optical interconnect applications. In this work, we demonstrate that these donor impurities have a dramatic impact on the excess carrier lifetime and introduce detrimental many-body effects such as linewidth broadening in the gain medium. Linewidth broadening Γopt = 10 meV for undoped Ge and Γopt ≥ 45 meV for Ge with doping level up to 5.4×1019 cm−3, were extracted using photoluminescence spectroscopy and pump-probe spectroscopy. In addition, we observed that the excess carrier lifetime (τc) drops by more than an order of magnitude from 3 ns in undoped Ge to < 0.3 ns in doped Ge.

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