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Authors: J. Zhang, A. Gocalinksaka, E. Pelucchi, J. Van Campenhout, G. Lepage, P. Verheyen, B. Corbett, G. Roelkens
Title: III-V on silicon widely tunable laser realised by micro-transfer printing
Format: International Conference Proceedings
Publication date: 9/2019
Journal/Conference/Book: European Conference on Optical Communication
Volume(Issue): p.paper 4459381
Location: Dublin, Ireland
Citations: Look up on Google Scholar
Download: Download this Publication (598KB) (598KB)


We present a C-band widely-tunable III-V-on-silicon laser (50 nm tuning, 5.2 dBm maximum power, 300 kHz minimum linewidth) realized through a micro-transfer-printing approach, in which III-V SOAs are pre-fabricated on a III-V substrate transferred using an elastomeric stamp to the silicon photonic circuit defining the laser cavity.

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