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Authors: B. Terres, H. Agarwal, L. Orsini, A. Montanaro, V. Sorianello, D. Van Thourhout, K. Watanabe, T. Taniguchi, M. Romagnoli, S. Goossens, F. H. L. Koppens
Title: 2D material integration challenges and optoelectronics applications
Format: International Conference Proceedings
Publication date: 12/2019
Journal/Conference/Book: IEDM - International Electron Devices Meeting (invited)
Editor/Publisher: IEDM 2019, 
Volume(Issue): p.33.5
Citations: Look up on Google Scholar


Graphene-based devices are edging closer to industrialization, at first instance related to sensors and opto-electronics applications. In particular, graphene-based photodetectors1 and modulators have already shown competitive performances and proof-on-concept integration with Si-CMOS technologies has been demonstrated2. For example, graphene modulators are reaching, and even surpassing3, state-of-the-art commercial modulators. In order to fulfil all industrial requirements, new dielectric combinations providing flat encapsulation for graphene that allow high levels of doping control and hysteresis-free operation are needed.

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