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Authors: L. Bogaert, J. Van Kerrebrouck, L. Breyne, J. Lambrecht, H. Li, K. Van Gasse, J. Verbist, M. Vanhoecke, H. Ramon, A. Srinivasan, P. De Heyn, J. Van Campenhout, P. Ossieur, P. Demeester, X. Yin, J. Bauwelinck, G. Torfs, G. Roelkens
Title: SiGe EAM-Based Transceivers for Datacenter Interconnects and Radio over Fiber
Format: International Journal
Publication date: 5/2021
Journal/Conference/Book: IEEE Journal on Selected Topics in Quantum Electronics (invited)
Volume(Issue): 27(3) p.6000113
DOI: 10.1109/JSTQE.2020.3027046
Citations: 3 ( - last update: 18/2/2024)
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Silicon photonics is a key-enabling technology leveraging decades of effort and infrastructure of the microelectronics CMOS industry resulting in high yield, low cost and potential high volume manufacturing. Furthermore, due to the high index contrast of the platform, very compact, high-complexity photonic integrated circuits can be devised.To benefit fromthese advantages, high-speed modulators should also be compatible with silicon technology. In this respect, SiGe electro-absorptionmodulators (EAM) are considered as a promising candidate since they are CMOS-compatible and offer high-speed, compact, low-loss and low-power modulation. In this paper, we discuss SiGe EAM-based transceivers for next-generation datacenter interconnects (DCI) and radio-over-fiber (RoF) fronthaul in next-generation cellular networks.

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