| Authors: | C. Ozdemir, Y. De Koninck, D. Yudistira, N. Kuznetsova, M. Baryshnikova, D. Van Thourhout, B. Kunert, M. Pantouvaki, J. Van Campenhout | | Title: | 0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer | | Format: | International Conference Presentation | | Publication date: | 12/2020 | | Journal/Conference/Book: | European Conference on Optical Communication
| | Location: | Brussels, Belgium (Virtual presentation) | | DOI: | 10.1109/ECOC48923.2020.9333310 | | Citations: | 2 (Dimensions.ai - last update: 21/4/2024)
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Abstract
We report p-i-n InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetectors
monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 pA
(1.36x10-7A/cm2) at -1V bias and internal responsivities of 0.65A/W at 1020nm wavelength. Related Research Topics
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