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Authors: J. Goyvaerts, A. Grabowski, J. Gustavssson, S. Kumari, A. Stassen, R. Baets, A. Larsson, G. Roelkens
Title: Enabling VCSEL-on-silicon nitride photonic integrated circuits with micro-transfer-printing
Format: International Journal
Publication date: 12/2021
Journal/Conference/Book: Optica
Editor/Publisher: Optica, 
Volume(Issue): 8(12) p.1573-1580
Citations: Look up on Google Scholar
Download: Download this Publication (20.5MB) (20.5MB)


New wavelength domains have become accessible for photonic integrated circuits (PICs) with the development of silicon nitride PICs. In particular, the visible and near-infrared wavelength range is of interest for a range of sensing and communication applications. The integration of energy-efficient III-V lasers, such as vertical-cavity surface-emitting lasers (VCSELs), is important for expanding the application portfolio of such PICs. However, most of the demonstrated integration approaches are not easily scalable towards low-cost and large-volume production. In this work, we demonstrate the micro-transfer-printing of bottom-emitting VCSELs on silicon nitride PICs as a path to achieve this. The demonstrated 850 nm lasers show waveguide-coupled powers exceeding 100 µW, with sub-mA lasing thresholds and mW-level power consumption. A single-mode laser with a side-mode suppression ratio over 45 dB and a tuning range of 5 nm is demonstrated. Combining micro-transfer-printing integration with the extended-cavity VCSEL design developed in this work provides the silicon nitride PIC industry with a great tool to integrate energy-efficient VCSELs onto silicon nitride PICs.

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