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Authors: M. Billet, L.N Reis, T. Vanackere, T. Vandekerckhove, F. Leo, G. Roelkens, B. Kuyken
Title: Heterogeneous integration on silicon nitride for integrated photonics: lasers and nonlinear materials.
Format: International Conference Presentation
Publication date: Accepted for publication. Not yet published
Journal/Conference/Book: JNTE 2022 (invited)
Location: Besancon, France
Citations: Look up on Google Scholar
Download: Download this Publication (147KB) (147KB)

Abstract

Silicon (Si) and silicon nitride (SiN) photonics is a key technology in the field of integrated photonics and has experienced a rapid development over the past decade [1]. However, some functionalities such as light generation or detection that cannot easily addressed with a monolithic Si and SiN platform are desired. Heterogeneous integration using micro-transfer printing is presented here as an effective solution to address this issue. Indeed, this technology allows for efficient use of non-native materials and enables the heterogeneous integration of a wide range of devices and materials. In a first part, we will discuss here the integration of III-V semiconductors optical amplifiers (SOAs) on SiN circuits. Using this technology we will demonstrate a mode-locked laser operation in the telecom range. In a second part, we will discuss the integration of nonlinear materials (χ(2) and χ(3), such as gallium phosphide [3] and lithium niobate [4]. Photonic structures fabricated with theses materials will be presented.

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