Authors:	D. Maes, Q. Hu, R. Borkowski, Y. Lefevre, G. Roelkens, S. Lemey, E. Peytavit, B. Kuyken
Title:	High-Bandwidth Photodiodes on Silicon Nitride Supporting Net Bitrates in Excess of 350 Gbit/s
Format:	International Conference Proceedings
Publication date:	Accepted for publication. Not yet published
Journal/Conference/Book:	European Conference on Optical Communication
Location:	Basel, Switzerland
Online:	https://ieeexplore.ieee.org/document/9979616
Citations:	Look up on Google Scholar
Download:	(709KB)

Abstract

Silicon-nitride-based integrated photonic platforms currently lack fast photodiodes, limiting its adoption for high-speed optical transceivers. We show uni-traveling-carrier (UTC) photodiodes heterogeneously integrated by means of micro-transfer-printing and demonstrate their excellent bandwidth performance at 1550 nm, achieving net bit rates in excess of 350 Gbit/s.