| Authors: | K. Akritidis, M. Billet, S.S. Saseendran, S. Poelman, G. Roelkens, P. Neutens, J. Brouckaert, P. Van Dorpe, B. Kuyken | | Title: | a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm | | Format: | International Conference Proceedings | | Publication date: | Accepted for publication. Not yet published | | Journal/Conference/Book: | IEEE Photonics Conference (IPC)
| | Editor/Publisher: | IEEE, | | Location: | Orlando, United States | | Citations: | Look up on Google Scholar
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Abstract
Overcoming the high index contrast between SiN and III-V amplifiers is essential for the realization of heterogeneously integrated evanescently coupled lasers. Here, we propose a design based on a-Si:H as the transition layer, demonstrating sub-1.2 dB loss for the whole SiN-III/V-SiN transition at 920 nm.
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