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Authors: K. Akritidis, M. Billet, S.S. Saseendran, S. Poelman, G. Roelkens, P. Neutens, J. Brouckaert, P. Van Dorpe, B. Kuyken
Title: a-Si:H Layer Enabling a sub-1.2 dB Loss SiN-III/V-SiN Transition for Evanescently Coupled Lasers at 920 nm
Format: International Conference Proceedings
Publication date: 11/2023
Journal/Conference/Book: IEEE Photonics Conference (IPC)
Editor/Publisher: IEEE, 
Volume(Issue): p.paper MH3.3 (2 pages)
Location: Orlando, United States
DOI: 10.1109/IPC57732.2023.10360576
Citations: 1 ( - last update: 16/6/2024)
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Overcoming the high index contrast between SiN and III-V amplifiers is essential for the realization of heterogeneously integrated evanescently coupled lasers. Here, we propose a design based on a-Si:H as the transition layer, demonstrating sub-1.2 dB loss for the whole SiN-III/V-SiN transition at 920 nm.

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