|Z. Ouyang, E.M.B. Fahmy, D. Colucci, A. Yimam, B. Kunert, D. Van Thourhout
|Side-amorphous-silicon-grating InGaAs/GaAs nano-ridge distributed feedback laser monolithically grown on 300 mm silicon substrate
|International Conference Presentation
|Asia Communications and Photonics Conference 2023
| p.paper ACPPOEM 0731-152 (3 pages)
|Look up on Google Scholar
A compact III-V semiconductor laser is regarded as a promising light source for the silicon photonic platform due to its unique advantages of low energy consumption and small footprint. However, the significant lattice mismatch between the III-V material and silicon is a fundamental challenge for the monolithic integration of III-V lasers on silicon substrates and requires specific integration solutions to confined relaxation defects outside the active device region. Here, a distributed feedback GaAs/InGaAs nano-ridge laser directly grown on silicon substrate by nano-ridge engineering is demonstrated. Under pulse pumping, the lasing was achieved with a cavity length as small as 50 Âµm. This laser establishes a novel route to realize a compact light source for the future high-density and massively scalable silicon photonic integrated circuits.
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