| Authors: | Z. Ouyang, E.M.B. Fahmy, D. Colucci, A. Yimam, B. Kunert, D. Van Thourhout | | Title: | Side-amorphous-silicon-grating InGaAs/GaAs nano-ridge distributed feedback laser monolithically grown on 300 mm silicon substrate | | Format: | International Conference Presentation | | Publication date: | 11/2023 | | Journal/Conference/Book: | Asia Communications and Photonics Conference 2023
| | Volume(Issue): | p.paper ACPPOEM 0731-152 (3 pages) | | Location: | Wuhan, China | | Citations: | Look up on Google Scholar
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Abstract
A compact III-V semiconductor laser is regarded as a promising light source for the silicon photonic platform due to its unique advantages of low energy consumption and small footprint. However, the significant lattice mismatch between the III-V material and silicon is a fundamental challenge for the monolithic integration of III-V lasers on silicon substrates and requires specific integration solutions to confined relaxation defects outside the active device region. Here, a distributed feedback GaAs/InGaAs nano-ridge laser directly grown on silicon substrate by nano-ridge engineering is demonstrated. Under pulse pumping, the lasing was achieved with a cavity length as small as 50 µm. This laser establishes a novel route to realize a compact light source for the future high-density and massively scalable silicon photonic integrated circuits. Related Research Topics
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