| Authors: | Y. Tan, Shenpu Niu, M. Billet, Nish Singh, M. Niels, T. Vanackere, Joris Van Kerrebrouck, G. Roelkens, B. Kuyken, D. Van Thourhout | | Title: | Micro-transfer-printed Thin film lithium niobate (TFLN)-on- Silicon Ring Modulator | | Format: | International Journal | | Publication date: | Accepted for publication. Not yet published | | Journal/Conference/Book: | ACS Photonics
| | Editor/Publisher: | American Chemical Society, | | Citations: | Look up on Google Scholar
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Abstract
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO)
modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in
terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key
challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy “pick
and place”, which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous
integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-onsilicon
ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with
compact and scalable silicon circuity. The presented device exhibits an insertion loss of 1.5 dB, extinction ratio of 37 dB,
electro-optical bandwidth of 16 GHz and modulation rates up to 45 Gbits−1. Related Research Topics
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