Abstract

Thin-film lithium niobate (TFLN) modulators have advanced high-speed modulation by enabling higher bandwidths and lower driving voltages. How-ever, their relatively large footprints impose limitations on integration densi-ty. In many applications, compact, low-voltage modulators are preferred, particularly when bandwidth constraints are dictated by external factors. Fur-thermore, integration on a CMOS-compatible platform is highly desirable to facilitate scalability and leverage established technological infrastructures. In this work, we heterogeneously integrate a compact low-voltage lithium nio-bate racetrack modulator of 250 μm x 500 μm on a silicon nitride (SiN) plat-form. The device consists of a micro-transfer printed racetrack-shaped X-cut TFLN slab onto a SiN all-pass racetrack resonator. The modulator exhibits a tuning efficiency of 1.7 pm/V, a Q-factor of 285 000 and a 3 dB-bandwidth of 1.18 GHz. These results pave the way towards densely integrated compact low-voltage amplitude modulators on a scalable CMOS platform.

Related Research Topics

• All-Silicon Modulators
• Transfer printing technology