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Union Miniere - INTEC: Development of epitaxial layers and components on Ge-substratesDuration: 1/2/98-31/1/2001 Objective: - To demonstrate the feasibility of Ge-substrates for the fabrication of optoelectronic components and magnetic sensors
INTEC's Role: - MOCVD- growth and optimisation of InAlGaAs/GaAs, InAlGaP/GaAs, InGaN/GaN, GaInNAs/GaAs, InGaAsP/InP layers on Ge-substrates
- Fabrication of 670 nm, 780 nm, 850 nm, 980 nm, 1300 nm LEDs on Ge-substrates
- Fabrication of 980 nm laserdiodes on Ge
- Fabrication of InGaAsP/InP waveguides on Ge
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Publications in the framework of this project (2)
International Conferences
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Z. Wang, M. Pantouvaki, G. Morthier, C. Merckling, J. Van Campenhout, D. Van Thourhout, G. Roelkens,
Heterogeneous Integration of InP Devices on Silicon, the 28th International Conference on Indium Phosphide and Related Materials (IPRM) (invited), Japan, p.paper ThD1-1 (2016)
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Z. Wang, A. Malik, B. Tian, M. Muneeb, Clement Merckling, M. Pantouvaki, Yosuke Shimura, Roger Loo, J Van Campenhout, D. Van Thourhout, G. Roelkens,
Near/Mid-Infrared Heterogeneous Si Photonics, The 9th International Conference On Silicon Epitaxy And Heterostructures (invited), (2015) .
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