Authors:	J. Brouckaert, W. Bogaerts, P. Dumon, D. Van Thourhout, R. Baets
Title:	Planar Concave Grating Demultiplexer Fabricated on a Nanophotonic Silicon-on-Insulator Platform
Format:	International Journal
Publication date:	5/2007
Journal/Conference/Book:	Journal of Lightwave Technology
Editor/Publisher:	IEEE/OSA,
Volume(Issue):	25(5) p.1269-1275
DOI:	10.1109/jlt.2007.893025
Citations:	156 (Dimensions.ai - last update: 15/12/2024) 96 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

We show that a nanophotonic silicon-on-insulator (SOI) platform offers many advantages for the implementation of planar concave grating (PCG) demultiplexers, as compared with other material systems. We present for the first time the design and measurement results of a PCG demultiplexer fabricated on a nanophotonic SOI platform using standard wafer scale CMOS processes including deep-UV lithography. Our PCG device has four wavelength channels with a channel spacing of 20 nm and a record-small footprint of 280 × 150 µm. The on-chip loss is 7.5 dB, and the crosstalk is better than −30 dB.

Related Research Topics

• Silicon (nano)photonic devices fabrication with 193nm and 248nm (DUV) Optical lithography (1999-2012)
• Photo-spectrometer based on heterogeneous integration (2004-2009)

Related Projects

• IWT: epSOC (electro-photonic System-On-Chip)