Authors:	N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, G. Roelkens
Title:	Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit
Format:	International Journal
Publication date:	12/2011
Journal/Conference/Book:	IEEE Photonics Technology Letters
Volume(Issue):	23(2011) p.1760
DOI:	10.1109/LPT.2011.2169244
Citations:	34 (Dimensions.ai - last update: 14/4/2024) 22 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

We report the integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13µA at -0.1V) at room temperature. A high responsivity of 0.44A/W is measured at 2.29 µm. This yields 1.63x109 cmHz1/2/W of Johnson-noise-limited-detectivity.

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