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Authors: D. Maes, S. Lemey, G. Roelkens, M. Zaknoune, V. Avramovic, E. Okada, P. Szriftgiser, E. Peytavit, G. Ducournau, B. Kuyken
Title: High-speed uni-traveling-carrier photodiodes on silicon nitride
Format: International Journal
Publication date: 1/2023
Journal/Conference/Book: APL Photonics
Editor/Publisher: AIP Publishing, 
Volume(Issue): 8(1) p.016104
DOI: 10.1063/5.0119244
Citations: 14 (Dimensions.ai - last update: 9/6/2024)
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Abstract

Integrated photonics is an emerging technology for many existing and future tele- and data communication applications. One platform of particular interest is Silicon Nitride (SiN) thanks to - amongst others - its very low-loss waveguides. However, it lacks active devices, such as lasers, amplifiers and photodiodes. For this, hybrid or heterogeneous integration is needed. Here, we bring high-speed uni-travelling-carrier photodiodes (UTC PDs) to a low-loss SiN-platform by means of micro-transfer-printing. This versatile technology for heterogeneous integration not only allows very dense and material-efficient III-V integration, it also eases fabrication yielding high-performance detectors. The waveguide-coupled photodiodes feature a responsivity of 0.3 A/W at 1550 nm, a dark current of 10 nA and a bandwidth of 155 GHz at a low bias. At zero bias, a record bandwidth of 135 GHz is achieved. We further demonstrate that this integrated detector can be used for direct photomixing at terahertz frequencies. A back-to-back communication link with a carrier frequency around 300 GHz is set up, and data rates up to 160 Gbit/s with low error vector magnitude (EVM) are shown, showcasing near-identical performance at zero bias.

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