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Authors: T. Vanackere, T. Vandekerckhove, L. Bogaert, M. Billet, S. Poelman, S. Cuyvers, Joris Van Kerrebrouck, Arno Moerman, Olivier Caytan, Sam Lemey, Guy Torfs, G. Roelkens, S. Clemmen, B. Kuyken
Title: High-Speed Lithium Niobate Modulator on Silicon Nitride using Micro-Transfer Printing
Format: International Conference Proceedings
Publication date: 5/2023
Journal/Conference/Book: Conference on Lasers and Electro-Optics
Volume(Issue): p.paper STh1R.1 (2 pages)
Location: San Jose, United States
DOI: 10.1364/CLEO_SI.2023.STh1R.1
Citations: 4 ( - last update: 21/7/2024)
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A high-speed modulator on silicon nitride is demonstrated using 2 mm-long micro-transfer printed lithium niobate coupons. This device has a 3-dB bandwidth >50 GHz, and an insertion loss of 3.3 dB that allowed us to transmit 70 Gb/s.

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