Ge on Si avalanche photodetectors
Silicon photonics for telecom, datacom and interconnect
Main Researcher: Hongtao Chen
Avalanche photodetectors (APD) provide higher sensitivity than their classical PIN detector counterparts. This can have a major impact on the link budget in silicon photonics interconnects. Germanium detectors are readily integrated on the silicon photonics platform. In order for Germanium-based APDs to be readily integrated with CMOS electronics, low bias voltages are required. In this work Germanium avalanche photodetectors are studied with the aim of realizing low-voltage operation (-4V) and high sensitivity (-30dBm). We focus on conventional PIN structures due to their lower dark current compared to that of MSM structures. The baseline lateral PIN-based APD device is shown in Fig. 1(a), and TCAD simulation results for doping distribution and electric field distribution in Fig. 1(b).
Fig. 1. Germanium-based PIN APD
Other people involved:
PublicationsBack to overview
J. Verbist, J. Lambrecht, B. Moeneclaey, J. Van Campenhout, X. Yin, J. Bauwelinck, G. Roelkens,
40-Gb/s PAM-4 Transmission over 40 km using an O-band EML and a sub-5V Silicon Germanium APD , IEEE Photonics Technology Letters, p.2238-2241 doi:10.1109/LPT.2017.2757608 (2017).
H. Chen, J. Verbist, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, X. Yin, J. Bauwelinck, J. Van Campenhout, G. Roelkens,
high sensitivity 10Gb/s Si photonic receivers based on a low-voltage waveguide coupled Ge avalanche photodetector, Optics Express, 23(2), p.815-822 doi:10.1364/oe.23.000815 (2015) .
H. Chen, J. Verbist, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, B. Moeneclaey, X. Yin, J. Bauwelinck, J. Van Campenhout, G. Roelkens,
Sub-5V germanium waveguide avalanche photodiode based 25 Gb/s 1310 nm optical receiver, Asia Communications and Photonics Conference (ACP), Hong Kong, p.Am.1B.4 doi:10.1364/acpc.2015.am1b.4 (2015) .
Z. Wang, A. Malik, B. Tian, M. Muneeb, Clement Merckling, M. Pantouvaki, Yosuke Shimura, Roger Loo, J Van Campenhout, D. Van Thourhout, G. Roelkens,
Near/Mid-Infrared Heterogeneous Si Photonics, The 9th International Conference On Silicon Epitaxy And Heterostructures (invited), (2015) .